to-92 plastic-encapsulate transistors KTC3197 transistor (npn) features z high gain: gpe=33db(typ) (f=45mhz). z good linearity of h fe maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 4 v i c collector current -continuous 50 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 4 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =3v,i c =0 0.1 a dc current gain h fe v ce =12.5v,i c =12.5ma 20 200 collector-emitter saturation voltage v ce(sat) i c =15ma,i b =1.5ma 0.2 v base-emitter saturation voltage v be(sat) i c =15ma,i b =1.5ma 1.5 v collector output capacitance c ob v cb =10v,i e =0,f=1mh z 0.8 2 pf collector-base time constant cc.r bb v cb =10v,i e =-1ma, f=30mh z 25 ps transition frequency f t v ce =12.5v,i c =12.5ma 300 mh z power gain gpe v ce =12.5v,i e =12.5ma, f=45mh z 28 36 db to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,june,2011
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